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GTS6923 Datasheet Preview

GTS6923 Datasheet

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2006/05/04
REVISED DATE :
GTS6923
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
50m
-3.5A
Description
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and
cost-effectiveness.
Features
*Low on-resistance
*Fast Switch Characteristic
*Included Schottky Diode
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current3 (MOSFET)
Continuous Drain Current3 (MOSFET)
Pulsed Drain Current1 (MOSFET)
Average Forward Current (Schottky)
Pulsed Forward Current1 (Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS
VKA
VGS
ID @Ta=25
ID @Ta=70
IDM
IF
IFM
PD @Ta=25
Tstg
Tj
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (MOSFET) Max.
Thermal Resistance Junction-ambient3 (Schottky) Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
-20
20
±12
-3.5
-2.8
-30
1
25
1
1
-55 ~ +150
-55 ~ +125
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
V
A
A
A
A
A
W
W
Unit
/W
GTS6923
Page: 1/4




GTM

GTS6923 Datasheet Preview

GTS6923 Datasheet

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

No Preview Available !

ISSUED DATE :2006/05/04
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-20
-
-0.5
-
-
-
-0.03
-
10
-
-
-
-
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-3.5A
nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-20V, VGS=0
- -25 uA VDS=-16V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 50 m VGS=-4.5V, ID=-3.5A
- 85
VGS=-2.5V, ID=-2.7A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 15.6 -
ID=-3.5A
Qgs - 2.1 - nC VDS=-10V
Qgd - 5.2 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 8.2 -
- 9.4 -
- 66.4 -
- 48 -
VDS=-10V
ID=-1A
ns VGS=-4.5V
RG=3.3
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 660 -
- 285 -
- 130 -
VGS=0V
pF VDS=-20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
-1.2
-0.83
Unit Test Conditions
V IS=-0.83A, VGS=0V
A VD= VG=0V, VS=-1.2V
Schottky Characteristics @ Tj=25
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward Voltage Drop
Max. Reverse Leakage Current
VF - - 0.5 V IF=1A
IRM - - 100 uA VR=20V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208
/W when mounted on Min. copper pad.
GTS6923
Page: 2/4


Part Number GTS6923
Description P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
Maker GTM
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