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GTS9922E Datasheet Preview

GTS9922E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
15m
6.8A
Description
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
±12
6.8
5.4
25
1
0.008
-55 ~ +150
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
GTS9922E
Page: 1/4




GTM

GTS9922E Datasheet Preview

GTS9922E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.05
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V VDS=VGS, ID=1mA
Forward Transconductance
gfs
- 22 -
S VDS=4.5V, ID=6A
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 10 uA VDS=20V, VGS=0
- 100 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 15 m VGS=4.5V, ID=6A
- 20
VGS=2.5V, ID=4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 25 40
ID=6A
Qgs - 3 - nC VDS=16V
Qgd - 9 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 11 -
VDS=15V
Tr
Td(off)
-
-
12
47
-
-
ID=1A
ns VGS=4.5V
RG=3.3
Tf - 23 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1730 2770
VGS=0V
- 280 -
pF VDS=20V
- 240 -
f=1.0MHz
Gate Resistance
Rg - 2.2 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit Test Conditions
V IS=0.84A, VGS=0V
ns IS=6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208
/W when mounted on Min. copper pad.
GTS9922E
Page: 2/4


Part Number GTS9922E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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