Datasheet4U Logo Datasheet4U.com

GTS9926E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • Package Dimensions REF. A A1 b c D Millimeter Min. Max. 0.05 0.19 0.09 2.90 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 4.30 0.45 0° 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 4.6 3.7 20 1 0.008 -55 ~ +150 Unit V V A A A W W/ Total Po.

📥 Download Datasheet

Datasheet Details

Part number GTS9926E
Manufacturer GTM
File Size 389.20 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTS9926E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GTS15PI120B3H IGBT SilverMicro

Other Datasheets by GTM

Part Number Description
GTS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS9928E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTS9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 4.6A The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount package Description Features Package Dimensions REF. A A1 b c D Millimeter Min. Max. 0.05 0.19 0.09 2.90 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 4.30 0.45 0° 6.60 4.50 0.75 8° 0.