GTS9926E
GTS9926E is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
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ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 4.6A
The GTS9926E provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
- Low on-resistance
- Capable of 2.5V gate drive
- Low drive current
- Surface mount package
Description
Features
Package Dimensions
REF. A A1 b c D
Millimeter Min. Max.
0.05 0.19 0.09 2.90 1.20 0.15 0.30 0.20 3.10
REF. E E1 e L S
Millimeter Min. Max.
6.20 4.30 0.45 0° 6.60 4.50 0.75 8°
0.65...
