GU88LS02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GU88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GU88LS02

Datasheet Details

Part number	GU88LS02
Manufacturer	GTM
File Size	299.98 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GU88LS02 Datasheet
Additional preview pages of the GU88LS02 datasheet.

Product details

Description

The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. Low Gate Charge Simple Drive Requirement Fast Switching

Features

Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 75 62.5 350.

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Published: Oct 5, 2007 |