GS-065-008-1-L Datasheet

Features and Benefits

• 650 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, small 5x6 mm PDFN package
• RDS(on) = 225 mΩ
• IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• H.