GS-065-011-1-L Datasheet PDF - GaN Systems 650V E-mode GaN transistor Specs

GS-065-011-1-L - 650V E-mode GaN transistor

Datasheet Summary

Description

The GS-065-011-1-L is an enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

650 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, small 5x6 mm PDFN package.
RDS(on) = 150 mΩ.
IDSmax,DC = 11 A / IDSmax,Pulse = 19A.
Ultra-low FOM.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.

Datasheet Details

Part number	GS-065-011-1-L
Manufacturer	GaN Systems
File Size	1.10 MB
Description	650V E-mode GaN transistor
Datasheet	GS-065-011-1-L Datasheet
Additional preview pages of the GS-065-011-1-L datasheet.

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Full PDF Text Transcription

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GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 150 mΩ • IDSmax,DC = 11 A / IDSmax,Pulse = 19A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant Package Outline top view Circuit Symbol Applications • Power Adapters • LED Lighting Drivers • Fast Battery Charging • Power Factor Correction • Appliance Motor Drives • Wireless Power Transfer • Industrial Power Supplies

Published: Jun 17, 2024 |