GS-065-011-1-L Datasheet | GaN Systems

Features - 650 V enhancement mode power transistor - 850 V transient drain-to-source voltage - Bottom-cooled, small 5x6 mm PDFN package - RDS(on) = 150 mΩ - IDSmax,DC = 11 A / IDSmax,Pulse = 19A - Ultra-low FOM - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - High switching frequency (> 1 MHz) - Fast and controllable fall and rise times - Reverse conduction capability - Zero reverse recovery loss - Source Sense (SS) pin for optimized gate drive - Ro HS 3 (6+4) pliant Package Outline top view Circuit Symbol Applications - Power Adapters - LED Lighting Drivers - Fast Battery Charging - Power Factor Correction - Appliance Motor Drives - Wireless Power Transfer - Industrial Power Supplies Description The GS-065-011-1-L is an enhancement mode Ga Non-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching frequency. Ga N Systems innovates with industry leading advancements such as...