GS-065-011-2-L Datasheet | GaN Systems

Features - 650 V enhancement mode power transistor - 850 V transient drain-to-source voltage - Bottom-cooled 8x8 mm PDFN package - RDS(on) = 150 mΩ - IDS,max = 11 A / IDSmax,Pulse = 19A - Ultra-low FOM - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - High switching frequency (> 1 MHz) - Fast and controllable fall and rise times - Reverse conduction capability - Zero reverse recovery loss - Source Sense (SS) pin for optimized gate drive - Ro HS 3 (6+4) pliant GS-065-011-2-L 650 V E-mode Ga N transistor Top View Bottom View Applications - Consumer and Industrial Power Supplies - Power Adapters - LED Lighting Drivers - Fast Battery Charging - Power Factor Correction - Appliance and Industrial Motor Drives - Wireless Power Transfer Description The GS-065-011-2-L is an enhancement mode Ga Non-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching frequency. Ga N Systems...