GS-065-011-6-L Overview
The GS-065-011-6-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.
GS-065-011-6-L Key Features
- 700 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, small 5x6 mm PDFN package
- RDS(on) = 125 mΩ
- IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times