GS-065-011-6-LR
Features
- 700 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, 8x8 mm PDFN package
- RDS(on) = 125 mΩ
- IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- Ro HS 3 (6+4) pliant
GS-065-011-6-LR 700 V E-mode Ga N transistor
Top View
Bottom View
Applications
- Power Adapters
- LED Lighting Drivers
- Fast Battery Charging
- Power Factor Correction
- Appliance Motor Drives
- Wireless Power Transfer
- Industrial Power Supplies
Description
The GS-065-011-6-LR is an enhancement mode Ga N-on-Silicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching frequency. Ga N Systems innovates with industry...
