GS-065-011-2-L Datasheet, GaN Systems

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled 8x8 mm PDFN package
* RDS(on) = 150 mΩ
* IDS,max =.

* Consumer and Industrial Power Supplies
* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging.