GS-065-011-2-L
GS-065-011-2-L is 650V E-mode GaN transistor manufactured by GaN Systems.
Features
- 650 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled 8x8 mm PDFN package
- RDS(on) = 150 mΩ
- IDS,max = 11 A / IDSmax,Pulse = 19A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) pliant
GS-065-011-2-L 650 V E-mode GaN transistor
Top View
Bottom View
Applications
- Consumer and Industrial Power Supplies
- Power Adapters
- LED Lighting Drivers
- Fast Battery...
