GS-065-011-2-L Datasheet

Features and Benefits

• 650 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled 8x8 mm PDFN package
• RDS(on) = 150 mΩ
• IDS,max = 11 A / IDSmax,Pulse = 19A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switch.