| Description | The GS-065-011-6-LR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS065-011-6-LR is a bottom-side cooled transistor that offers very l... |
| Features |
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ • IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controlla... |
| Datasheet |
 GS-065-011-6-LR Datasheet 860.59KB |
