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GS-065-060-5-B-A Datasheet - GaN Systems

Automotive 650V GaN E-mode transistor

GS-065-060-5-B-A Features

* AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)

* 650 V enhancement mode power transistor

* Bottom-cooled, low inductance GaNPX® package

* RDS(on) = 25 mΩ

* IDS(max) = 60 A

* Ultra-low FOM

* Simple gate drive requirements (0 V to 6 V)

* T

GS-065-060-5-B-A General Description

The GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNP.

GS-065-060-5-B-A Datasheet (1.24 MB)

Preview of GS-065-060-5-B-A PDF

Datasheet Details

Part number:

GS-065-060-5-B-A

Manufacturer:

GaN Systems

File Size:

1.24 MB

Description:

Automotive 650v gan e-mode transistor.

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TAGS

GS-065-060-5-B-A Automotive 650V GaN E-mode transistor GaN Systems

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