• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
• 650 V enhancement mode power transistor
• Bottom-cooled, low inductance GaNPX® package
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching.