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GS-065-060-5-B-A Datasheet

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GaN Systems · GS-065-060-5-B-A File Size : 1.24MB · 6 hits

Features and Benefits


• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
• 650 V enhancement mode power transistor
• Bottom-cooled, low inductance GaNPX® package
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching.

GS-065-060-5-B-A GS-065-060-5-B-A GS-065-060-5-B-A
TAGS
Automotive
650V
GaN
E-mode
transistor
GS-065-060-5-B-A
GS-065-060-5-T-A
GS-065-004-1-L
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