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1N1122A - Silicon Standard Recovery Diode

Download the 1N1122A datasheet PDF. This datasheet also covers the 1N1199A variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 50 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N1199A-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N1122A
Manufacturer GeneSiC
File Size 735.07 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N1122A Datasheet

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 12 12 12 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.
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