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1N3210 - Silicon Standard Recovery Diode

Download the 1N3210 datasheet PDF. This datasheet also covers the 1N3208 variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 50 V to 300 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward curren.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3208-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N3210
Manufacturer GeneSiC
File Size 650.37 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N3210 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N3210R Silicon Standard Recovery Diode
1N3211 Silicon Standard Recovery Diode
1N3211R Silicon Standard Recovery Diode
1N3212 Silicon Standard Recovery Diode
1N3212R Silicon Standard Recovery Diode

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.
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