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1N3211R - Silicon Standard Recovery Diode

Download the 1N3211R datasheet PDF (1N3208 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon standard recovery diode.

Features

  • High Surge Capability.
  • Types from 50 V to 300 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward curren.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3208-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N3211R
Manufacturer GeneSiC
File Size 650.37 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N3211R Datasheet

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Other Datasheets by GeneSiC
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Full PDF Text Transcription

Click to expand full text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3208 thru 1N3211R VRRM = 50 V - 300 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3208 (R) 1N3209 (R) 1N3210 (R) 1N3211 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.
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