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1N3766 - Silicon Standard Recovery Diode

Download the 1N3766 datasheet PDF. This datasheet also covers the 1N3765 variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 700 V to 1000 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3765-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N3766
Manufacturer GeneSiC
File Size 698.83 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N3766 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N3766R Silicon Standard Recovery Diode
1N3765 Silicon Standard Recovery Diode
1N3765R Silicon Standard Recovery Diode
1N3767 Silicon Standard Recovery Diode
1N3767R Silicon Standard Recovery Diode

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
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