1N3766R Datasheet PDF (Silicon Standard Recovery Diode)

1N3766R - Silicon Standard Recovery Diode

Download the 1N3766R datasheet PDF (1N3765 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon standard recovery diode.

Features

High Surge Capability.
Types from 700 V to 1000 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cu.

📥 Download Datasheet

1N3766R silicon standard recovery diode by GeneSiC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (1N3765-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	1N3766R
Manufacturer	GeneSiC
File Size	698.83 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N3766R Datasheet

📁 Similar Datasheet

1N3766R - Silicon Standard Recovery Diode (America Semiconductor)

1N3766 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)

1N3766 - Silicon-Power Rectifiers (Diotec Semiconductor)

1N3766 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)

1N3766 - Silicon Power Rectifier (Microsemi)

1N3766 - Silicon Standard Recovery Diode (America Semiconductor)

1N3765 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)

1N3765 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)

1N3765 - Silicon Power Rectifier (Microsemi)

1N3765 - Power Silicon Rectifier Diodes (Vishay)

Full PDF Text Transcription

Click to expand full text

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.

Published: Feb 3, 2016 |