High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (T
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation TA = 25°C TA = 70°C
(1)
A
= 25°C unless otherwise.
Full PDF Text Transcription for GF4410 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
GF4410. For precise diagrams, and layout, please refer to the original PDF.
GF4410 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 13.5mΩ ID 10A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3...
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RDS(ON) 13.5mΩ ID 10A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0 °– 8 ° 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at termi
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GF4410 Datasheet
