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GF4435 - P-Channel Enhancement-Mode MOSFET

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General Semiconductor

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GF4435 P-Channel Enhancement-Mode MOSFET by General Semiconductor - Datasheet Preview — Datasheet preview – GF4435

Datasheet Details

Part number	GF4435
Manufacturer	General Semiconductor
File Size	179.03 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	GF4435 Datasheet
Additional preview pages of the GF4435 datasheet.

Product details

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit.

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Published: Jan 26, 2007 |