GF4435 Datasheet PDF

MECHANICAL DATA

Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g

FEATURES

● Advanced Trench Process Technology
● High Density Cell Design for Ultra Low On-Resistance
● Specially Designed for Low Voltage DC/DC Converters
● Fast Switching for High Efficiency

MAXIMUM RATINGS

and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit –30 Unit V ± 20 – 8.0 – 50 2.5 1.6 –55 to 150 50 A W °C °C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Note: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. 7/10/01 GF4435 P-Channel Enhancement-Mode MOSFET

ELECTRICAL CHARACTERISTICS

(T Parameter Static Gate Threshold Voltage...