GF4410 - N-channel Enhancement-mode MOSFET

Datasheet Summary

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise.

General Semiconductor

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Datasheet Details

Part number	GF4410
Manufacturer	General Semiconductor
File Size	181.88 KB
Description	N-channel Enhancement-mode MOSFET
Datasheet	GF4410 Datasheet
Additional preview pages of the GF4410 datasheet.

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Full PDF Text Transcription

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GF4410 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 13.5mΩ ID 10A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0 °– 8 ° 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.

Published: Dec 27, 2008 |