General Semiconductor GF4412
N-channel Enhancement-mode MOSFET
| Part No. | GF4412 |
|---|---|
| Datasheet | GF4412 Download |
| Manufacturer |  General Semiconductor |
| Description | N-channel Enhancement-mode MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5gFEATURES
● Advanced Trench Process Technology● High Density Cell Design for Ultra Low On-Resistance
● Specially Designed for Low Voltage DC/DC Converters
● Fast Switching for High Efficiency
MAXIMUM RATINGS
and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation(1) TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, Tstg RθJA Limit 30 Unit V ± 20 7 5.8 30 2.3 2.5 1.6 –55 to 150 50 A W °C °C/W 7/10/01 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. GF4412 N-Channel Enh...
