General Semiconductor GF4450
N-Channel Enhancement-Mode MOSFET
MECHANICAL DATA
Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5gFEATURES
● Advanced Trench Process Technology● High Density Cell Design for Ultra Low On-Resistance
● Specially Designed for Low Voltage DC/DC Converters
● Fast Switching for High Efficiency
MAXIMUM RATINGS
and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit 60 Unit V ± 20 7.5 50 2.5 1.6 –55 to 150 50 A W °C °C/W Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance Note: (1) Surface Mounted on FR4 Board, t ≤ 10s 7/10/01 GF4450 N-Channel Enhancement-Mode MOSFETELECTRICAL CHARACTERISTICS
(T Parameter Static Drain-Source Breakdown Voltage Ga...