* The MFIRF10N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converter
MFIRF10N65 Datasheet (612.74 KB)
MFIRF10N65
Global Semiconductor
612.74 KB
Power mosfet.
MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Characteristics Values Units ID 10 A IDM 40 A VDS .
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