MFIRF2N65
MFIRF2N65 is POWER MOSFET manufactured by Global Semiconductor.
MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65
ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 2.0 A IDM 8.0 A VDS 650 V
VGS TJ T storage
±30 150 -55 ~150
℃ ℃
POWER MOSFET
Description/ Features
The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
- 150℃ Tj operation
- Low Power Loss & Low cost
- Fast Switching
- RoHS pliant
Case...
