MFIRF13N50
MFIRF13N50 is manufactured by Global Semiconductor.
MFIRF13N50 MCIRF13N50
POWER MOSFET
ID = 13A VDS = 500V RDS(on)MAX = 0.48Ω
Description/ Features
The MFIRF13N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation
- Low Power Loss & Low cost
- Fast Switching
- RoHS pliant
- Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 13 50 500 ±30 150 -55 ~150 Units A A V V
℃ ℃
Case Styles
1、 GATE 2、 DRAIN 3、...
