MFIRF7N60
MFIRF7N60 is manufactured by Global Semiconductor.
MFIRF7N60 MCIRF7N60
POWER MOSFET
ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω
Description/ Features
The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation
- Low Power Loss & Low cost
- Fast Switching
- RoHS pliant
- Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.0 28.0 600 ±30 150 -55 ~150 Units A A V V
℃ ℃
Case Styles
1、 GATE 2、 DRAIN 3、...
