MFIRF10N65
MFIRF10N65 is manufactured by Global Semiconductor.
MFIRF10N65 MCIRF10N65
ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 10 A IDM 40 A VDS 650 V
VGS TJ T storage
±30 150 -55 ~150
℃ ℃
POWER MOSFET
Description/ Features
The MFIRF10N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
- 150℃ Tj operation
- Low Power Loss & Low cost
- Fast Switching
- RoHS pliant
Case Styles
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