GPT05N70 - POWER FIELD EFFECT TRANSISTOR

Key Features

This advanced high voltage MOSFET is designed to withstand.
Higher Current Rating high energy in the avalanche mode and switch efficiently. This.
Lower Rds(on) new high energy device also offers a drain-to-source diode.
Lower Capacitances with fast recovery time. Designed for high voltage, high speed.
Lower Total Gate Charge switching.

GPT05N70 power field effect transistor by Greatpower - Datasheet Preview

Datasheet Details

Part number	GPT05N70
Manufacturer	Greatpower
File Size	310.10 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT05N70 Datasheet

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Full PDF Text Transcription (Reference)

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GPT05N70 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand  Higher Current Rating high energy in the avalanche mode and switch efficiently. This  Lower Rds(on) new high energy device also offers a drain-to-source diode  Lower Capacitances with fast recovery time. Designed for high voltage, high speed  Lower Total Gate Charge switching applications such as power supplies, converters,  Tighter VSD Specifications power motor controls and bridge circuits.