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GPT05N50 - POWER FIELD EFFECT TRANSISTOR

Description

GPT05N50 POWER FIELD EFFECT TRANSISTOR

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT05N50
Manufacturer Greatpower
File Size 405.55 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT05N50 Datasheet
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Full PDF Text Transcription

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GENERAL DESCRIPTION GPT05N50 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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