GPT05N70 Description
FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching applications such as power supplies, converters, Tighter VSD...
GPT05N70 Key Features
- Higher Current Rating
- Lower Rds(on)
- Lower Capacitances
- Lower Total Gate Charge