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GPT05N70 - POWER FIELD EFFECT TRANSISTOR

Features

  • This advanced high voltage MOSFET is designed to withstand.
  • Higher Current Rating high energy in the avalanche mode and switch efficiently. This.
  • Lower Rds(on) new high energy device also offers a drain-to-source diode.
  • Lower Capacitances with fast recovery time. Designed for high voltage, high speed.
  • Lower Total Gate Charge switching.

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Datasheet preview – GPT05N70

Datasheet Details

Part number GPT05N70
Manufacturer Greatpower
File Size 310.10 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT05N70 Datasheet
Additional preview pages of the GPT05N70 datasheet.

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Full PDF Text Transcription

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GPT05N70 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand  Higher Current Rating high energy in the avalanche mode and switch efficiently. This  Lower Rds(on) new high energy device also offers a drain-to-source diode  Lower Capacitances with fast recovery time. Designed for high voltage, high speed  Lower Total Gate Charge switching applications such as power supplies, converters,  Tighter VSD Specifications power motor controls and bridge circuits.
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