GPT05N70
GPT05N70 is POWER FIELD EFFECT TRANSISTOR manufactured by Greatpower.
DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand
- Higher Current Rating high energy in the avalanche mode and switch efficiently. This
- Lower Rds(on) new high energy device also offers a drain-to-source diode
- Lower Capacitances with fast recovery time. Designed for high voltage, high speed
- Lower Total Gate Charge switching applications such as power supplies, converters,
- Tighter VSD Specifications power motor controls and bridge circuits.
- Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP Top View
TO-251 Front View
TO-252 Front View
GATE DRAIN SOURCE
GATE DRAIN SOURCE
12 3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current － Continuous － Pulsed
Rating
Gate-to-Source Voltage － Continue
Total Power Dissipation TO-251,252
TO-220
TO-220FP
Derate above 25℃
TO-251, 252
TO-220 TO-220FP
Operating and Storage Temperature...
