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GPT05N65 - POWER FIELD EFFECT TRANSISTOR

Description

GPT05N65 POWER FIELD EFFECT TRANSISTOR

Features

  • This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching.

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Datasheet preview – GPT05N65

Datasheet Details

Part number GPT05N65
Manufacturer Greatpower
File Size 1.37 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT05N65 Datasheet
Additional preview pages of the GPT05N65 datasheet.

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Full PDF Text Transcription

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GENERAL DESCRIPTION GPT05N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching applications such as power supplies, converters, Tighter VSD Specifications power motor controls and bridge circuits.
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