Part number: A1SHB
Manufacturer: H&M Semiconductor
File Size: 803.79KB
Download: 📄 Datasheet
Description: P-Channel Trench Power MOSFET
* VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
General Features
* VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
* High power a.
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -20V,ID =.
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