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HM1P15PR - Power MOSFET

Key Features

  • RDSON < 900 mΩ@VGS = -10 V.
  • RDSON < 1000 mΩ@VGS = -4.5V.
  • Gross Die = 12000.

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HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES ◆ RDSON < 900 mΩ@VGS = -10 V ◆ RDSON < 1000 mΩ@VGS = -4.5V ◆ Gross Die = 12000 APPLICATIONS ◆ Battery Charge ◆ Load Switching ◆ Power Converter D G S Schematic diagram SOT-89-3L top view Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2 Symbol VDS VGS ID IDM PD TSTG TJ RθJA Ratings -150 ±20 -1 -3 2.