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HM2N20 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2N20 by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2N20 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2N20 N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2N20
Manufacturer	H&M Semiconductor
File Size	401.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N20-HMSemiconductor.pdf
Additional preview pages of the HM2N20 datasheet.

HM2N20 Product details

Description

The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Nov 27, 2018 |