HM4480 mosfet equivalent, n-channel enhancement mode power mosfet.
*VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage an.
GENERAL FEATURES
*VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V
* High density cell desi.
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