HM4487B Datasheet, H&M Semiconductor

* VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged <.

It is ESD protested. D G General Features
* VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
* Su.

The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features
* VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-1.