HM4606 mosfet equivalent, n & p-channel enhancement mode power mosfet.
* N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
* P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VG.
General Features
* N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
* P-Channel.
The HM4606 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.
General Features
* N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(O.
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