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HM4606B - N & P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4606B N & P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4606B

Datasheet Details

Part number	HM4606B
Manufacturer	H&M Semiconductor
File Size	566.84 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4606B Datasheet
Additional preview pages of the HM4606B datasheet.

HM4606B Product details

Description

The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width HM4606B HM4606B SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless.

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Published: Nov 27, 2018 |