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HM4606 - N & P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V.
  • P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram HM4606 Marking and pin assignment.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4606A N & P-Channel Enhancement Mode Power MOSFET
HM4606B N & P-Channel Enhancement Mode Power MOSFET
HM4606C N & P-Channel Enhancement Mode Power MOSFET
HM4606D N & P-Channel Enhancement Mode Power MOSFET
HM4611 N and P-Channel Enhancement Mode Power MOSFET

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HM4606 N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V ● P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 95mΩ @ VGS=-4.