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HM4606A - N & P-Channel Enhancement Mode Power MOSFET

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H&M Semiconductor

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HM4606A N & P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4606A

Datasheet Details

Part number	HM4606A
Manufacturer	H&M Semiconductor
File Size	550.57 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4606A Datasheet
Additional preview pages of the HM4606A datasheet.

HM4606A Product details

Description

The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width HM4606A HM4606A SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless.

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Published: Nov 27, 2018 |