HM4822B Datasheet, MOSFET, H&M Semiconductor

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HM4822B Features and benefits

* VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized.

HM4822B Application

GENERAL FEATURES
* VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* H.

HM4822B Description

The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES
* VDS =30V,ID =10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V S.

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