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HM4953B - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package SS Schematic diagram HM4953B Marking and pin Assignment.

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HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. DD GG GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.