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HM4953 - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4953.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Full PDF Text Transcription for HM4953 (Reference)

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HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit...

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nology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.

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