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HM4953 - Dual P-Channel Enhancement Mode Power MOSFET

Description

The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4953.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet preview – HM4953

Datasheet Details

Part number HM4953
Manufacturer H&M Semiconductor
File Size 381.66 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4953 Datasheet
Additional preview pages of the HM4953 datasheet.

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Full PDF Text Transcription

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HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.
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