Datasheet Details
| Part number | HM4926 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 1.11 MB |
| Description | 60V Full-Bridge of MOSFET |
| Datasheet |
 HM4926 Datasheet
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General Description
The HM4926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications.
Key Features
- N-channel： VDS =60V,ID =5A RDS(ON)=46mΩ (typical) @ VGS=4.5V RDS(ON)=34mΩ (typical) @ VGS=10V P-Channel： VDS =-60V,ID =-5A RDS(ON)=135mΩ (typical) @ VGS=-4.5V RDS(ON)=85mΩ (typical) @ VGS=-10V.
- Excellent gate charge x RDS(ON) product(FOM).
- Very low on-resistance RDS(ON).
- 150 °C operating temperature.
- Pb-free lead plating.
- 100% UIS tested.