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HM4953B - Dual P-Channel Enhancement Mode Power MOSFET

Description

The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package SS Schematic diagram HM4953B Marking and pin Assignment.

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Datasheet preview – HM4953B

Datasheet Details

Part number HM4953B
Manufacturer H&M Semiconductor
File Size 563.69 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4953B Datasheet
Additional preview pages of the HM4953B datasheet.

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Full PDF Text Transcription

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HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. DD GG GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.
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