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HM4922 - 20V Full-Bridge of MOSFET

General Description

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Key Features

  • N-channel： VDS =20V,ID =3A RDS(ON)=32mΩ (typical) @ VGS=4.5V RDS(ON)=42mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-3A RDS(ON)=60mΩ (typical) @ VGS=-4.5V RDS(ON)=75mΩ (typical) @ VGS=-2.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Full PDF Text Transcription for HM4922 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM4922. For precise diagrams, and layout, please refer to the original PDF.

20V Full-Bridge of MOSFET Description 7KH+0XVHVDGYDQFHGWUHQFKWHFKQRORJWR SURYLGH H[FHOOHQW 5'6 21  DQG ORZ JDWH FKDUJH  7KH FRPSOHPHQWDU 026)(7V PD...

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QW 5'6 21  DQG ORZ JDWH FKDUJH  7KH FRPSOHPHQWDU 026)(7V PD EH XVHG WR IRUP D +%ULGJHDQGIRUDKRVWRIRWKHUDSSOLFDWLRQV General Features  N-channel： VDS =20V,ID =3A RDS(ON)=32mΩ (typical) @ VGS=4.5V RDS(ON)=42mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-3A RDS(ON)=60mΩ (typical) @ VGS=-4.5V RDS(ON)=75mΩ (typical) @ VGS=-2.

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