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HM4953C - Dual P-Channel Enhancement Mode Power MOSFET

Description

The HM4953C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -27V,ID = -5A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package SS Schematic diagram HM4953C Marking and pin Assignment.

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Datasheet Details

Part number HM4953C
Manufacturer H&M Semiconductor
File Size 472.83 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4953C Datasheet
Additional preview pages of the HM4953C datasheet.

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Full PDF Text Transcription

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HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. DD GG GENERAL FEATURES ● VDS = -27V,ID = -5A RDS(ON) < 100mΩ @ VGS=-4.
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