HM4N65 Datasheet - H&M Semiconductor

HM4N65 650V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devic.

HM4N65 Features

* 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V

* Low gate charge ( typical 15nC)

* High ruggedness

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-

HM4N65-HMSemiconductor.pdf