HM4N65F, HM4N65 Datasheet - H&M Semiconductor

HM4N65F 650V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devic.

HM4N65F Features

* 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V

* Low gate charge ( typical 15nC)

* High ruggedness

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-

HM4N65-HMSemiconductor.pdf

HM4N65F Datasheet Preview — This datasheet PDF includes multiple part numbers: HM4N65F, HM4N65. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HM4N65F, HM4N65

Manufacturer:

H&M Semiconductor

File Size:

416.61 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: HM4N65F, HM4N65.
Please refer to the document for exact specifications by model.

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HM4N65F HM4N65 650V N-Channel MOSFET H&M Semiconductor

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