HM6408 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM6408 by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	HM6408
Manufacturer	H&M Semiconductor
File Size	796.98 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM6408-HMSemiconductor.pdf
Additional preview pages of the HM6408 datasheet.

The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

📁 HM6408 Similar Datasheet

HM64 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HM64YLB36514 - 16M Synchronous Late Write Fast Static RAM (Renesas Technology)
HM6-6617B883 - 2K x 8 CMOS PROM (Intersil Corporation)
HM6-6642-9 - 512 x 8 CMOS PROM (Intersil Corporation)
HM6-6642B-9 - 512 x 8 CMOS PROM (Intersil Corporation)
HM60 - PRECISION METAL FILM RESISTORS (RCD)
HM6116 - 2048-word X 8bit High Speed CMOS Static RAM (Hitachi Semiconductor)
HM6147H - 4096 x 1-Bit High Speed CMOS SRAM (Hitachi)

Other Datasheets by H&M Semiconductor

Published: Nov 27, 2018 |